Reason being the IRF640 needs quite some energy to actually switch it ON, so *if* some of this energy triples through the circuit, it will be amplified and in such a way *could* be responsible for the cap 'charge up'... However a replacement mosfet (STS2DNF30L) for example which requires *way* less energy to switch on, hence would *also* cause *less* energy triple trough the circuit... Now *when* the STS2DNF30L results in a *better* cap 'charge up' then the IRF640 it can be argued leakage is not the cause.
On the other hand, if the STS2DNF30L shows a cap 'charge up' that is far lower then when he used the IRF640, it can be argued that indeed the hidden leakage could be responsible for the cap 'charge up'.
Sounds plausible ?
--
NextGen67
Yes, this is correct. I am hoping to get a mosfet transistor that requires
*less drive voltage* and shows spiffy ie not sluggish Coil resonant effects.
Our mosfet gate drive voltage at ~11Vpp is too high in my opinion. We
are feeding our transistor too heavily for what it is doing and it's
passing through that power. Ok, boost/buck converter using the
parasitic inductance of the long clip leads...I don't care how it
accomplishes this task of raising it's bulk input voltage... If we feed it
less it's going to have less available. The combination of lower drive
and lower mosfet capacitance is much lower possible energy pass
through potential, Therefore if the capacitor still gains our gain must be
occurring from overunity. Unfortunately light rider's 4N35
opto doesn't suggest this. With the 4n35 we only feed the transistor
with energy we already have in the circuit. Things seem to get sluggish.
The reason I like the pick-up coil funding the gate energy is that; The main
toroid coil is going to take care of itself. Energy put out will reasonate
back in plus maybe some overunity gain. Only if the pickup coil is coupled
to main coil unit for unit will we never be able to accomplish anything.
As we will push down the gate energy required, less will be taken but
still no overunity gain might be present to raise the bulk capacitors.
The other thing is if the transistor wants to see more gate voltage
for it's operation for some reason (maybe I'm not as hot as I think
I am on designing with fet's) we could use that transformer to push
up the gate voltage while we decrease inputted power. This is kind of
a secondary cross check to decrease gate drive power if we have
really succeeded in increasing mosfet input impedance. If we can drive
the transistor at the voltage of the signal generator based in overunity
energy...ie not drawing anymore from bulk. Then the bulk capacitor is going
to charge up in exactly the same way as it did with the signal generator.
We don't really care, at this time, what circuit elements are causing that
bulk voltage increase.
Also, gotoluc could put the 100ohm resistor into the gate circuit
and show that it doesn't effect things there. Then the current
waveform going into the gate of the mosfet could be directly
seen and be measurable. Also reductions or increases with other
transistors would be measurable as a change in current.
:S:MarkSCoffman
