I detect energy levels are beginning to converge.
For an experiment I would be interested in seeing
the maximum overunity gain measured two ways.
One time with a stopwatch while the voltage goes
from say 16.64Vdc to 17.64Vdc. The other would
null out the voltage change with a variable resistor.
Then measure the resistor setting with the DVM.
These things wouldn't take very long in a video
The other thing would be to build the NE555 cmos
timer circuit powered from dc derived from the reasonant
independent pickup coil. Have the NE555 output frequency
driving a 2nf capacitor to ground to see if you can get
to the required 10.94Vac pp. drive signal level of the
IRF640. (caution here)
Finally, I think you should purchase two IRF510 mosfets. Install
them in parallel in your experimental breadboard (easy) just install
them next to one another with all S,G,D's connected to each
other. Now you have a Fet with the following characteristics;
Rds = .20ohms (very similar to the IRF640) and Ciss= 2 x 135
= 270pf (4 times lower then IRF640). Now see what that will do
by tuning and measuring. I expect gate drive might be reduced
down to 3.0Vac pp! Now measure maximum overunity. One needs
to keep fingers crossed, that lower input drive is not the cause
of caps charging. Make overunity measurements. Then take one
of the parallel IRF510's away and re-tune and measure overunity
gain again... You probably will be driving like ~100 times less power
into the circuit from the signal generator. It makes the gate driver
look like 30->40Kohms equiv.
---
I wanted to summarize what I have said in previous
posts.
a) Use a series variable resistor on the gate of the
mosfet in tuning for maximum overunity gain in place
of the signal generator's output level control in case
its not available. Signal generator <-> opto only logical
use of opto.
b) Use a variable resistor to null-out the voltage gain
on the bulk capacitors after setting circuit overunity
gain to maximum rate. (better use a fixed resistor in
series with the variable) Measure the variable resistor
setting with a DVM. Lower resistance means better
overunity gain.
c) Find an “outlier†mosfet with spec sheet Ciss<200pf
And Rds<1.0ohm The lower both of these values are,
better...Found one, See below. This will lower the
drive voltage by up to ten times from the 10.94Vac
pp of IRF640 and lower transferable power even more.
Unfortunately if net overunity gain gets damaged you
won't be able to tell whether it’s due to the lower gate
power injection or the higher Rds, so keep one's fingers
crossed that the overunity gains seen is really overunity
energy.
Here is a mosfet that looks very promising;
IRF510; Ciss =135pf, Rds =0.4ohms <= try this!
As long as these parameters are correct and it is a mosfet
function forget the other parameters as they tend to trade
off except max Vds. Before doing anything check against any
stupid errors.
---
You can find all sorts of Web "calculators" for various electronic
equations on google. Just type the formal description of
what you want into google search then add the "calculator"
keyword.
impedance of inductance at frequency calculator
reasonant frequency of inductor and capacitor calculator
:MarkSCoffman
