Please concentrate on electrostatic resonancehttp://www.youtube.com/watch?v=MIMa1knlrfA&feature=player_embedded#! look at this video first than read the rest
primary question;
i
s electrostatics dimensional and how many dimensional it represents?
ONE SIMPLE CONCLUSION FROM ALL THAT IS BELOW
If the electrostatics is able to create mechanical motion That means that molecules of the body and individual atoms of the body is to be shaken ( moved) I was once saying about hammering effect in the spark gap.
Plasma is hammering spark gap contact and inertia is part of that. I was trying to envision or say picture that mechanism at last 2 minutes of video
http://www.youtube.com/watch?v=HKVyeQkW8j0Well molecules of air are being shaken as well.
But where is interaction creating FE.
How about if we have vertically placed capacitor with two horizontal plates
Lower plate is fixed but upper plate is suspended on the spring..
Would that upper plate jump up down due to electrostatic charge?
And if it would and as second step we make that plate not to move than what moves?
Something must move?What the article I brought to your attention says, about monopolar and bipolar voltages?
And using software to control repulsion ?
The wafer is holding the disc , even after charge is removed and there is a need to apply waveform to eliminate the holding force (free the wafer)- Johnsen-Rahbek method
And why is that?
Recent change to article( morning Saturday 9:35 Am EST. )When, while heaving two plates of capacitor, one plate is suspended on the spring, than at no electrostatic
charge, dielectric constant of dielectric between plates is Er
But when electrostatic charge deflects upper plate of its position than dielectric constant of the dielectric between plates will change. Er +/-
That will make capacitance change, and components of series and parallel equivalent circuit including stray capacitance to change..
Now you play with magnetic field if you wish.
But aren't we than talking about electrostatic resonance?
http://adsabs.harvard.edu/abs/2003PhRvL..91y3902F The Smithsonian/NASA Astrophysics Data SystemResonant Behavior of Dielectric Objects (Electrostatic Resonances)
Fredkin, D. R.; Mayergoyz, I. D.
Physical Review Letters, vol. 91, Issue 25, id. 253902 Resonant behavior of dielectric objects occurs at certain frequencies for which the object permittivity is negative and the free-space wavelength is large in comparison with the object dimensions. Unique physical features of these resonances are studied and a novel technique for the calculation of resonance values of permittivity, and hence resonance frequencies, is proposed. Scale invariance of resonance frequencies, unusually strong orthogonality properties of resonance modes, and a two-dimensional phenomenon of “twin†spectra are reported. The paper concludes with brief discussions of optical controllability of these resonances in semiconductor nanoparticles and a plausible, electrostatic resonance based, mechanism for nucleation and formation of ball lightning.
Electrostatic (plasmon) resonances in nanoparticles
Isaak D. Mayergoyz
Department of Electrical and Computer Engineering, Institute for Advanced Computer Studies, University of Maryland,
College Park, Maryland 20742, USA
http://physics.ucsd.edu/~drf/pub/PRB05.pdf
A surface integral eigenvalue based technique for the direct calculation of resonance values of the permittivity of nanoparticles, and hence resonance frequencies, is discussed. General physical properties of electrostatic plasmon resonances are presented. Strong orthogonality properties of resonance modes, a two dimensional phenomenon of “twin†spectrum and explicit estimates of resonance frequencies in terms of
geometrical characteristics of convex nanoparticles are reported. Second-order corrections for resonance values
of the dielectric permittivity are derived. Tunability and optical controllability of plasmon resonances in
semiconductor nanoparticles are discussed and, as a digression, a plausible plasmon resonance mechanism for
nucleation and formation of ball lightning is outlined. An efï¬cient numerical algorithm for the calculation of
resonance frequencies is developed and illustrated by extensive computational results that are compared with
theoretical results and available experimental data.
It is known that nanoscale particles can exhibit resonance
behavior at certain frequencies for which the particle permittivity is negative and the free-space wavelength is large in
comparison with particle dimensions. The latter condition
clearly suggests that these resonances are electrostatic in nature. They appear at speciï¬c negative values of the dielectric
permittivity for which source-free electrostatic ï¬elds may exist. This is, in essence, the physical mechanism of these resonances
Electrostatic Resonance Oscillations of a Nonuniform Hot Plasma in an External Field
http://prola.aps.org/abstract/PR/v139/i2A/pA394_1
Stanford Research Institute, Menlo Park, California[size=0.75em]Received 8 January 1965; revised 8 March 1965; published in the issue dated July 1965
The frequency spectrum of a hydrodynamic model of a finite, warm, nonuniform plasma in an arbitrary external electric or magnetic field is considered. We find that the spectrum is real and the system stable, for an arbitrary configuration. A variational principle is given for estimating the eigenfrequencies. First-order perturbation theory is applied to a cylindrical plasma, and formulas are obtained for the first-order correction to the eigenfrequencies (resonances) for the case of an applied magnetic field or transverse electric field, arbitrary electron density n00(r), and arbitrary angular dependence e[size=0.88em]iμθ (μ=0, ±1, ±2, ⋯), the effect of the applied fields on the zero-order electron density being included. We find that for μ≠0, the modes have a two fold degeneracy, and that a uniform axial magnetic field splits the resonances in two. The first-order correction to the resonances is found to vanish for a uniform transverse electric or magnetic field. These results are discussed relative to other models and to experiment, and appear to be in agreement with the available experimental data for the behavior of the main dipole resonance in both transverse and axial magnetic fields.
R
elative permittivity :
http://en.wikipedia.org/wiki/Relative_permittivity The relative permittivity of a material for a frequency of zero is known as its static relative permittivity or as its dielectric constan. Other terms used for the zero frequency relative permittivity include relative dielectric constant and static dielectric constant]
well
frequency zero: is frequency selected at time period chosen by you from any frequency graph.
As electrostatic is immediate response to change than
We can take any part of waveform, and for that waveform look for its electrostatic
frequency zeroas long as this part has steady form of properties for given delta t ... say upper horizontal part of square signal (length of say 10ns)
As long as you on it it is for you just amplitude at no frequency for the given 10ns
Temperature dependence of the relative static permittivity of waterThe
relative permittivity of a material under given conditions reflects the extent to which it
concentrates electrostatic lines of flux. In technical terms, it is the ratio of the amount of electrical energy stored in a material by an applied voltage, relative to that stored in a vacuum. Likewise, it is also the ratio of the capacitance of a capacitor using that material as a dielectric, compared to a similar capacitor that has a vacuum as its dielectric.
Trek’s video demonstrates two applications of Trek’s electrostatic clamping technology.
Please note that the wafer detection indicator appears in the upper right corner of the display on the front panel:
WC = wafer present and clamped
WP = wafer present but not clamped
NW = wafer not present
look at that video:http://www.trekinc.com/apps/app_e-chuck.aspElectrostaticCommonly used for holding silicon wafers during lithography processes, an electrostatic chuck comprises a metal base-plate and a thin dielectric layer; the metal base-plate is maintained at a high-voltage relative to the wafer, and so an electrostatic force clamps the wafer to it. Electrostatic chucks may have pins, or mesas, the height of which is included in the reported dielectric thickness; a design by
Sandia National Laboratory uses a patterned silicon-dioxide dielectric to form the pins.
[10]http://en.wikipedia.org/wiki/Chuck_(engineering)#ElectrostaticCoulomb Force(
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Portions of this entry contributed by
Leonardo MottaThe Coulomb force between two or more charged bodies is the force between them due to Coulomb's law.
If the particles are both positively or negatively charged, the force is repulsive; if they are of opposite charge, it is attractive.
By the middle of eighteenth century, only the qualitative aspects of the electric force were known.
Scientists started to speculate about the quantitative aspect of the force and the idea that the electric force could be similarly to the gravitational force, i.e., proportional to the inverse of the square of the distance.
In 1777-1785,
Charles Augustine Coulomb (
http://scienceworld.wolfram.com/images/crossrefs/biography.gif) proved experimentally that indeed the electric force was proportional to the inverse of the square of the distance.
Coulomb stated that the force that acts in two electrically charged bodies is proportional to the product of the module of their charges divided by the square of the distance d between them,
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http://scienceworld.wolfram.com/physics/CoulombForce.htmlDechuck Operation of Coulomb Type and Johnsen-Rahbek Type of
Electrostatic Chuck Used in Plasma Processing
Gyu Il SHIM and Hideo SUGAI
1)
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
1)
Department of Electronics and Information Engineering, Chubu University, Kasugai 487-8501, Japan
(Received 17 June 2008 / Accepted 24 July 2008)
Coulombic or Johnson-
Rahbek Operation Comparative study on Coulomb type and Johnsen-Rahbek type of electrostatic chuck used for holding a
silicon wafer in plasma processing is presented.
The remarkable differences between the two types are found in
dechuck operation where a high voltage applied to the chuck electrode is turned off to release the wafer from
the chuck stage. In case of the Coulomb type, an instantaneous large short-circuit current flows exponentially
decreasing with a short time constant (Ï„ = 0.14 ms). In case of the
J-R type, a non-exponentially decaying small
current is sustained for much longer time (∼1000 ms), thus
giving rise to the considerable
delay of wafer dechuck.
The mechanism of such decay is explained by a microscopic bi-layer model where the interfacial layer is divided
into three distinct regions having their own capacitance and surface resistance.
https://www.jstage.jst.go.jp/article/pfr/3/0/3_0_051/_pdf Model 646
Electrostatic Chuck Supply
http://www.trekinc.com/pdf/646sales.pdfBelow is picture of electrostatic chuck
Question: Aren't we dealing with primary mechanism of electrostatic chucking in TK device or OU devices in general?
Chucking is temporary energy storage is not?
And play with uni polar and bipolar charge as they do in commercial wafer eaching.
Is plasma controlled by electrostatic chucking?
Wesley