Language: 
To browser these website, it's necessary to store cookies on your computer.
The cookies contain no personal information, they are required for program control.
  the storage of cookies while browsing this website, on Login and Register.

GDPR and DSGVO law

Storing Cookies (See : http://ec.europa.eu/ipg/basics/legal/cookies/index_en.htm ) help us to bring you our services at overunity.com . If you use this website and our services you declare yourself okay with using cookies .More Infos here:
https://overunity.com/5553/privacy-policy/
If you do not agree with storing cookies, please LEAVE this website now. From the 25th of May 2018, every existing user has to accept the GDPR agreement at first login. If a user is unwilling to accept the GDPR, he should email us and request to erase his account. Many thanks for your understanding.
Amazon Warehouse Deals ! Now even more Deep Discounts ! Check out these great prices on slightly used or just opened once only items.I always buy my gadgets via these great Warehouse deals ! Highly recommended ! Many thanks for supporting OverUnity.com this way.

User Menu

Tesla Paper

Free Energy Book

Get paid

Donations

Please Donate for the Forum.
Many thanks.
Regards, Stefan.(Admin)

A-Ads

Powerbox

Smartbox

3D Solar

3D Solar Panels

DC2DC converter

Micro JouleThief

FireMatch

FireMatch

CCKnife

CCKnife

CCTool

CCTool

Magpi Magazine

Magpi Magazine Free Rasberry Pi Magazine

Battery Recondition

Battery Recondition

Arduino

Ultracaps

YT Subscribe

Gravity Machines

Tesla-Ebook

Magnet Secrets

Lindemann Video

Navigation

Products

Products

WaterMotor kit

Statistics

  • *Total Members: 84218
  • *Latest: RhineX

  • *Total Posts: 897395
  • *Total Topics: 15816
  • *Online Today: 44
  • *Most Online: 103
(December 19, 2006, 11:27:19 PM)
  • *Users: 1
  • *Guests: 16
  • *Total: 17

Author Topic: Chinese Oscillator and MOS FET Driver, Hardware experiment  (Read 19592 times)

Offline synchro1

  • Hero Member
  • *****
  • Posts: 4501
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #45 on: December 06, 2020, 09:11:55 PM »
A potentiometer controlled Varicap diode may help.

Free Energy | searching for free energy and discussing free energy


Offline conico

  • Sr. Member
  • ****
  • Posts: 292
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #46 on: February 03, 2021, 01:30:02 PM »
what I noticed: you can vary the frequency from that semi-adjustable resistor

The 5 turns are in parallel that make as much as a turn but has a high current
the 28 turns would be equivalent to the 3 turns in Ruslan's system with high current and high voltage at serial resonance.

Offline Jeg

  • Hero Member
  • *****
  • Posts: 1539
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #47 on: February 04, 2021, 09:46:55 AM »
what I noticed: you can vary the frequency from that semi-adjustable resistor


Thanks conico. If the frequency is matched to the primary LC, will this circuit behave as a ZVS driver?

The 5 turns are in parallel that make as much as a turn but has a high current
.

No, it is 5turns in series but made out of five wires in parallel. Like 5T with very thick cable.
Yes it is the half circuit of Ruslan what ever that means. ;)

Free Energy | searching for free energy and discussing free energy

Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #47 on: February 04, 2021, 09:46:55 AM »
Sponsored links:




Offline conico

  • Sr. Member
  • ****
  • Posts: 292
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #48 on: February 04, 2021, 03:51:15 PM »
ok, but I don't see enough space for 5 turns of 5 wires each turn,
 What does ZVS mean?

Offline Jeg

  • Hero Member
  • *****
  • Posts: 1539
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #49 on: February 04, 2021, 06:15:11 PM »
Yes, there is no space at all. But i saw his video and i counted them turn by turn. It was difficult but he did it. Perhaps the real diameter of his wires might be smaller than what they look like. I tried with 1mm on same core but i had not chance of doing it. I made it only by using 0.75mm wire for secondary and 4mm primaries on the top.

ZVS means zero voltage switch. See mazzilli driver below. It switches when voltage is zero and so it handles heat much easier than normal push pulls. I was just wondering if a normal push pull will operate the same if we attach a cap between drains like the chineese.

Free Energy | searching for free energy and discussing free energy

Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #49 on: February 04, 2021, 06:15:11 PM »
Sponsored links:




Offline MasterPlaster

  • Hero Member
  • *****
  • Posts: 519
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #50 on: February 04, 2021, 06:37:49 PM »
No, it is 5turns in series but made out of five wires in parallel. Like 5T with very thick cable.
I am having a deja vue.

Offline conico

  • Sr. Member
  • ****
  • Posts: 292
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #51 on: February 05, 2021, 02:10:48 PM »
do not use any capacitor in the oscillator with mje13003 I think it is just astable  oscillator and the capacitors are even in the coils  if you want to have the same frequency as the Chinese type, you must have the coil of 8 turns to be 150uH and the one of 11 turns 250 uH.
 So , if you do't have 150 microH on 8 turns make 9 or 10 turns or 7turns. The same on 11 turns , if you don;t have 250uH make 12turns or 13 turns , and is enough to have  the same frequency of the Chinese guy. Do'nt edd a capacitor like in mazilli diagram it will change the frequency dramaticaly.
In the second ferrite transformer you see there are 5 turns from 5 wires but NO is just one turns from 5 wires in parallel.
 See mazilli diagrams  where 5 turns is for IRFP 260 with R( DS) on 150 mili ohms but  the the Chinese guy use IRFB 3077 with R (DS) on 3,3 miliohmi. That means he use just one turns. With just one turn you will have more votaje and more amps.

I want to know your opinion please.

Free Energy | searching for free energy and discussing free energy

Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #51 on: February 05, 2021, 02:10:48 PM »
Sponsored links:




Offline lancaIV

  • elite_member
  • Hero Member
  • ******
  • Posts: 4792
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #52 on: February 05, 2021, 02:17:57 PM »
I am having a deja vue.
For each amplyfied ampere 1 ampere-coil ?
http://www.intalek.com/Index/Projects/Patents/DE3024814.pdf
To understand the above effect it is important to study Kunels
https://worldwide.espacenet.com/publicationDetails/mosaics?CC=DE&NR=3101918A1&KC=A1&FT=D&ND=3&date=19820819&DB=EPODOC&locale=en_EP#

figure 6,7

and second drawing page figure 18,19

               clearly included the scheme figure explanation in the description part !

B. a relatively small amount of electrical energy is required as an excitation current for the coil winding, or a hand crank is used with which the machine is energized according to the dynamoelek tric principle.


If one assumes an induced value of 100 Gauss for the electromagnetic excitation of the coil winding in the mean cross-sectional diameter of the coil winding without the soft iron core, 90 the nickeling receives an assumed value of the magnetic flux density after the insertion of the indented core according to the schematic representation 1000 gauss. This 1000 Gauss magnetic flux density (field line density) is integrated at the moment of the introduction of the complete current-carrying coil between two field magnetic poles with a magnetic flux of, for example, 5000 Causs and thus added to 6000 Gauss. With the simultaneous flow of the increased flux density through the coil in its longitudinal axis in the same direction of its own magnetic flux, the current voltage in the coil is suddenly increased by this self-induction during the ongoing rehabilitation of the magnetic field in the coil winding between the field magnetic poles. [0018]
This induction increase in the voltage, in turn, retroactively increases the magnetic flux in the coil core and in the entire machine system, possibly by a further 4000 Gauss or more, to a total of 10,000 Gauss (= 1 Tesla).

In this way, the initial value of the magnetic flux density of the value 1 is brought to the value 100, without an additional quantum of electrical energy having to be supplied in the functional sequence. In this way according to the invention a relatively high magnetic flux density is achieved as a result of the installed energy with little energy supplied, with which a very considerable torque can be generated in the machine according to the invention. t) The induction in the present case does not directly cause the torque itself, but it only contributes to the increase and addition of essential forces to a maximum of usable force and thus simultaneously allows permanent magnetic forces to be used and their cumulative integration with electromagnetic forces for conversion into a considerable torque.

What is here the claimed effect ? coil number dependent ?!
https://worldwide.espacenet.com/publicationDetails/biblio?DB=EPODOC&II=5&ND=3&adjacent=true&locale=en_EP&FT=D&date=20070201&CC=JP&NR=2007028879A&KC=A#

Offline Jeg

  • Hero Member
  • *****
  • Posts: 1539
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #53 on: February 06, 2021, 09:55:41 AM »
do not use any capacitor in the oscillator with mje13003

Hi conico.
I am talking about the capacitor that the Chineese used across the drains of his mosfets. This is at the second ferrite transformer and not at the oscillator side.


In the second ferrite transformer you see there are 5 turns from 5 wires but NO is just one turns from 5 wires in parallel.

You know that experimentation has no limits. You can test as many turns as you like across your primaries or secondary. But if we are to replicate the effects of the Chineese we have to stick to his circuits. His ferrite core has 5T in series per primary. As i already told you i have seen his movies. By experience i can tell you for sure that one turn primary will lead your mosfets to destruction. We have 24V input over there. Even by using 5T the current is already huge at the input. By using the caps of the chineese you will consume about 10A. If you also experiment with impedance matching, your input current will grow even more. My best output until now takes place with 24A at the input!!!

There are a lot of issues more though. Like for example...have you noticed that the Chineese doesn't use any choke at the input? What about saturation??? Why he doesn't saturate his core with just 5T at his input? His core is without any kind of gap...think about that.

Free Energy | searching for free energy and discussing free energy

Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #53 on: February 06, 2021, 09:55:41 AM »
3D Solar Panels

Offline conico

  • Sr. Member
  • ****
  • Posts: 292
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #54 on: February 06, 2021, 02:02:34 PM »
 Jeg,
We haven't seen the Chinese movie you saw, maybe tell us where to find it. I have some pictures and I say what I understand.
IRFB 3077 will not burn with 25 A in the drain because it withstands 129A in the drain.

Offline conico

  • Sr. Member
  • ****
  • Posts: 292
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #55 on: February 06, 2021, 02:38:37 PM »
I forgot. the Chinese did not use Choke because he used two 12v batteries mot a PSU

Free Energy | searching for free energy and discussing free energy

Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #55 on: February 06, 2021, 02:38:37 PM »
3D Solar Panels

Offline Jeg

  • Hero Member
  • *****
  • Posts: 1539
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #56 on: February 06, 2021, 02:43:03 PM »
Nice and strong mosfet, but doesn't change the facts.

The batteries are connected in series ;)

https://www.youtube.com/watch?v=lUh8hHWrGvI

Offline Jeg

  • Hero Member
  • *****
  • Posts: 1539
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #57 on: February 06, 2021, 03:03:37 PM »
I forgot. the Chinese did not use Choke because he used two 12v batteries mot a PSU

Without the choke i experience a heavy saturation in my yoke core. Keep in mind that the chineese doesn't provide any gap across his ferrite transformer...

Offline conico

  • Sr. Member
  • ****
  • Posts: 292
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #58 on: February 06, 2021, 03:08:42 PM »
Ha, ha. Ha exactly what I said, a turn it to the right and one to the left with 5 wires for each.

My drawing above is exactly what I saw in your video

not 5 turns but only one with 5 wires per turn or more
I'm glad you posted this movie, now I'm sure it's a single turn not 5 turns make it from 5-6 wires for one mosfet drain

Offline Jeg

  • Hero Member
  • *****
  • Posts: 1539
Re: Chinese Oscillator and MOS FET Driver, Hardware experiment
« Reply #59 on: February 06, 2021, 03:21:16 PM »
Ha, ha. Ha exactly what I said, a turn it to the right and one to the left with 5 wires for each.

My drawing above is exactly what I saw in your video

not 5 turns but only one with 5 wires per turn or more
Look at the total length of the wire before starting winding. This length corresponds to more than 1T. Close to 5 like in the drawing. But feel free to test your idea. I'll be here to discuss it if you like.

 

OneLink