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News announcements and other topics => News => Topic started by: Sergh on March 13, 2018, 01:58:19 PM
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This can be interesting for obtaining of free energy through:
- nonthermal effects in electrochemistry, in electrolysis, for effective cold ionization and ultrafast heating of conductors wires.
Semiconductor switches on the basis of dynistor structures with a time of transition into a conducting state of <1 ns were developed at the Ioffe Physical Technical Institute [1-2]. Such switches – deep-level dynistors (DLDs) – are able to switch a current of several kiloamperes of a capacitive energy storage at a current rise rate of up to 200 kA/μs
Ordinary commercial 50-Hz thyristors, which, as dynistors, have a four-layer semiconductor structure, can operate in such a mode.
With this thyristors in Yekaterinburg the following discharge parameters were realized: the discharge current amplitude of 200 kA, the maximum current-rise rate of 58 kA/μs, the current rise time (0.1-0.9 level) of 5.5 μs, the pulse duration (FWHM) of ~25 μs, and the switching efficiency of 0.97. During the performed tests, thyristors were enabled over 100 times. After each 5 shots, the leakage current through the thyristors was measured. At a nominal DC voltage of 2.4 kV per thyristor, it was around 4 μA and did not change during the tests:
http://iopscience.iop.org/article/10.1088/1742-6596/830/1/012016/pdf (http://iopscience.iop.org/article/10.1088/1742-6596/830/1/012016/pdf)
https://erk.by/upload/pics/zip/6803.jpg (https://erk.by/upload/pics/zip/6803.jpg)
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