"Collapsing the field of HV HF or better to say abrupt collapsing, is what causes this energy to be called in,..."

You bench people need the engineers but you also need me, to show you reality.

"Abrupt collapsing" is exactly what happens in an atomic explosion. The atomic bombs were devices that drove wedges of material into a center. This center experienced an "implosion". This implosion tore the fabric of space, leaving nothing in it...a empty hole/vacuum in space. Space cannot abore/stand/endure a vacuum, so it rushed more space energy into the vacuum to fill it up, instantly. As the space filled the vacuum, instantly, it looks like it "exploded", as the blast outward.

The energy "called in" is space filling the vacuum.

One more fact and you're on your way.....

You cannot store this spatial energy. You must use it immediately, therefore.....

Rather than try to store the energy, just repeat the abrupt collapse process using, for instance, a method Tesla used.... a spark gap.

Good luck. You're lucky you didn't ban me completely.

Nick,
In my last configuration see photo the fet drivers are not close to the fets,.....i use shielded kabel for the gate connection.
In one of my previous setup the gate drivers where as close as possible to the gates,........even then still gate distortion wich led to destroyed fets.

The main question is still is the effect coming from the "special" tuning or is it a cause(kacher) and effect(inverter) from the appearing gate pollution
It seems that the setups wich have solve there gate pollutions has lost the effect.

First one who creates the effect without gate distortion/ pollution has the real deal.

I hope some more of us doing bench work can do some testing on this item.

On the subject of whether the 'effect' is a feature of the claimed self-runners, the Andrian Dniester translated self-runner video here shows no sign of the 'effect'. The bulbs light cleanly and show no fluctuation. Its interesting to note one of the comments posted under the video, saying that a car battery and HV generator had been buried a week before beneath the earth rod.

Hell of a job for Nick to do Hoppy,... you must be yoking

Conico that is a very nice PCB card you have there I don't suppose you have a photo of the back side of the PCB I can copy and put on here ? any help would be appreciated by all I'm sure.

AG


  Yea, conico, nice work, and can you make me a nice assembled board like that one, also. So, that I can show it on here, as well?
   As Geo didn't reply to my suggestion of having one like his made for me. So... I keep trying...

Over voltage on the mosfet gates is not every ones problem, nor the only cause of component burn outs. I don't see any of these problems on my own set up, nor excessive heating of the fets, either. 
I don't think over voltages on the gates are the way to achieve free energy, at all. Nor do I see any one else thinking that as well. So, I don't know where Verpies is getting those ideas from.

If anyone is seeing over voltages on their gates, this does need to be addressed, of course, but the circuit and snubbers to avoid this from happening are already known, and posted, if people would just follow the schematics. Yet no one does, and chose to invent their own snubbers systems, instead, which may cause these types of problems.

There is a small step from gate interference to gate overvoltage.

Gate overvoltage is the extreme scenario and I am happy for you that you do not suffer from it. 
The more moderate and more common scenario is sub V_{GS_MAX} gate interference, in which the HV spike is not sufficient to damage the gate, but is capable of being amplified by the MOSFET and spuriously switching the drain circuit....and whatever is in it.
Please do not conflate the gate protection circuits with drain protection circuits.

I am not advocating totally suppressing HV spikes in the drain circuit, if they do not exceed the maximum Drain-Source voltage rating of the MOSFET.  In other words, the drain circuit spikes must be suppressed below V_DS Max and below Max drain dv/dt,  ...but that does not mean all the way down to zero.
Also, I am not proposing isolating the grenade inductor and yoke transformer from the influence of HV HF electric fields.  Let them bathe in it, for all it's worth.

I am a proponent of immunizing the gate control circuits from the HV interference and preventing any spurious MOSFET switching, that is not explicitly ordered by these control circuits.
Starting with gluing the MOSFET drivers to the MOSFETs and shielding, choking, bypassing the entire gate control circuit.