Semiconductor switches on the basis of dynistor structures with a time of transition into a conducting state of <1 ns were developed at the Ioffe Physical Technical Institute [1-2]. Such switches – deep-level dynistors (DLDs) – are able to switch a current of several kiloamperes of a capacitive energy storage at a current rise rate of up to 200 kA/μs

Ordinary commercial 50-Hz thyristors, which, as dynistors, have a four-layer semiconductor  structure,  can  operate  in  such  a  mode.

With this thyristors in  Yekaterinburg the following discharge parameters were realized: the discharge current amplitude of 200 kA, the maximum current-rise rate of 58 kA/μs, the current rise time (0.1-0.9 level) of 5.5 μs, the pulse duration (FWHM) of ~25 μs, and the switching efficiency of 0.97. During the performed  tests,  thyristors  were  enabled  over  100  times.  After each  5  shots,  the  leakage  current through the thyristors was measured. At a nominal DC voltage of 2.4 kV per thyristor, it was around 4 μA and did not change during the tests: